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A reliable and efficient small‐signal parameter extraction method for GaN HEMTs
Author(s) -
Chen Yongbo,
Xu Yuehang,
Luo Yong,
Wang Changsi,
Wen Zhang,
Yan Bo,
Xu Ruimin
Publication year - 2018
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2540
Subject(s) - high electron mobility transistor , signal (programming language) , extraction (chemistry) , transistor , matlab , equivalent circuit , small signal model , materials science , computer science , algorithm , electronic engineering , biological system , engineering , electrical engineering , chemistry , voltage , chromatography , programming language , operating system , biology
In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch‐off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize the extrinsic elements. This scanning and iteration combined algorithm based on a direct extraction method of extrinsic elements can reduce the impact of the approximation error, which makes the determined values of the small‐signal parameters more reliable. The extraction flow has been realized in a Matlab program for efficiency. A 16‐element small‐signal equivalent circuit model (SSECM) for GaN HEMTs has been employed, and the new parameter extraction method has been validated by comparing the simulated small‐signal S‐parameters with the measured data from 0.1 GHz to 40 GHz for two different device dimensions.