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Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model
Author(s) -
Hu Shanwen,
Xu Kaikai,
Yu Shu,
Wang Zixuan,
Zhou Bo,
Guo Yufeng
Publication year - 2018
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2538
Subject(s) - heterojunction bipolar transistor , transconductance , capacitance , nonlinear system , materials science , amplifier , transistor , large signal model , signal (programming language) , optoelectronics , mesfet , power (physics) , electronic engineering , electrical engineering , physics , bipolar junction transistor , engineering , field effect transistor , computer science , cmos , voltage , electrode , quantum mechanics , programming language
A large signal analysis method based on Gummel‐Poon model is proposed to predict nonlinear behavior of InGaP/GaAs HBT. A 2 × 20 μm 2 transistor is fabricated with InGaP/GaAs HBT technology. The large signal transconductance G m , conductance G be , and capacitance C BE , C BC are calculated based on the proposed method and measured using a RF testing probe. The calculated and measured results show good consistency up to nonlinear power level. The proposed method is applied to analyze variations of nonlinear large signal intrinsic elements of this transistor with increasing power under different bias conditions, in order to raise benefit of nonlinear consideration for power amplifiers.