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Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
Author(s) -
Douara Abdelmalek,
Djellouli Bouaza,
Abid Hamza,
Rabehi Abdelaziz,
Ziane Abderrezzaq,
Mostefaoui Mohammed,
Ben Toumi Ahmed,
Dif Naas
Publication year - 2018
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2518
Subject(s) - high electron mobility transistor , fermi gas , transistor , materials science , electron density , capacitance , electron , heterojunction , charge density , induced high electron mobility transistor , condensed matter physics , optoelectronics , poisson's equation , electron mobility , voltage , electrode , chemistry , physics , quantum mechanics
In this work, we present a physics‐based model for a two‐dimensional electron gas (2‐DEG) density at heterointerface in AlGaN/GaN high electron mobility transistor (HEMT). One‐dimensional Schrödinger‐Poisson equations are solved self‐consistently using a nonuniform mesh within the framework of the nextnano device simulation software. The 2‐DEG density of AlGaN/GaN HEMT is investigated through the dependence of electron concentrations on various structural parameters such as barrier layer thickness, doping concentration, and the Al content. We report calculations of gate capacitance from charge density characteristics with respect to gate voltage. Good agreement between calculation and experiment is found.