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Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs
Author(s) -
Dong Yan,
Xie Zili,
Chen Dunjun,
Lu Hai,
Zhang Rong,
Zheng Youdou
Publication year - 2018
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2482
Subject(s) - materials science , optoelectronics , heterojunction , gallium nitride , cutoff frequency , high electron mobility transistor , transistor , sapphire , substrate (aquarium) , layer (electronics) , nanotechnology , electrical engineering , optics , voltage , laser , oceanography , physics , engineering , geology
AlInN/GaN high electron mobility transistors (HEMTs) exhibit numerous advantages compared to other known semiconductor devices. However, it is more difficult to realize the enhancement mode (E‐mode) HEMTs of AlInN/GaN than those of the AlGaN/GaN heterostructure, because of the higher 2‐dimensional electron gas density at the AlInN/GaN interface. In this work, using simulations, it is shown that the E‐mode can be achieved in AlInN/GaN HEMTs by tuning the thickness of the AlInN barrier layer to less than 1.14 nm in our investigated structure. Based on the E‐mode structure, the device performance stability of Al 0.83 In 0.17 N/GaN HEMTs with different heat dissipative substrates was evaluated to explore their effect on the suppression of the self‐heating behavior. The DC behavior, device temperature, lattice temperature distribution, current cutoff frequency ( f T ), unilateral power‐gain‐cutoff frequency ( f max ), and transient response were investigated comparatively. The results indicate that the AlInN/GaN HEMTs with a free‐standing GaN substrate exhibit the best performance characteristics, ie, lowest lattice temperature, highest f T , and fastest transient response, in comparison with those using the flip‐chip substrate and sapphire substrate. Our simulation results suggest that the free‐standing GaN substrate can significantly improve the thermal stability and other basic performance characteristics of the E‐mode AlInN/GaN HEMTs.