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Sensitivity analysis and uncertainty estimation for nanoscale MOSFET
Author(s) -
Yu Panpan,
Sun Ling,
Cheng Jiali,
Gao Jianjun
Publication year - 2018
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2346
Subject(s) - parasitic extraction , sensitivity (control systems) , mosfet , transistor , extraction (chemistry) , substrate (aquarium) , biological system , estimation theory , materials science , electronic engineering , voltage , optoelectronics , computer science , engineering , electrical engineering , algorithm , chemistry , oceanography , chromatography , biology , geology
Abstract Analytical expressions of the sensitivity analysis and uncertainty estimation for intrinsic elements and substrate parasitics in the small‐signal equivalent circuit model of metal‐oxide‐semiconductor field‐effect transistor, related to the S ‐parameter measurement uncertainties, are derived in this paper. And the substrate parasitic elements are extracted, and corresponding sensitivities are calculated by using a cut‐off condition extraction procedure. Furthermore, the intrinsic model parameters and their uncertainties versus bias voltage are also investigated to give more reliable extraction results suitable for implementation in automatic multibias extraction programs.