Sensitivity analysis and uncertainty estimation for nanoscale MOSFET

Analytical expressions of the sensitivity analysis and uncertainty estimation for intrinsic elements and substrate parasitics in the small‐signal equivalent circuit model of metal‐oxide‐semiconductor field‐effect transistor, related to the S ‐parameter measurement uncertainties, are derived in this paper. And the substrate parasitic elements are extracted, and corresponding sensitivities are calculated by using a cut‐off condition extraction procedure. Furthermore, the intrinsic model parameters and their uncertainties versus bias voltage are also investigated to give more reliable extraction results suitable for implementation in automatic multibias extraction programs.