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Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor ( M‐R‐S ) model implemented in TCAD
Author(s) -
Alnassar M.S.N.,
Luong S.,
Tran H.N.,
Partridge J.G.,
Holland A.S.
Publication year - 2017
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2302
Subject(s) - interface (matter) , resistor , schottky barrier , resistive touchscreen , materials science , semiconductor , schottky diode , work function , optoelectronics , function (biology) , layer (electronics) , nanotechnology , electrical engineering , engineering , composite material , capillary number , voltage , diode , capillary action , evolutionary biology , biology
Abstract In this paper, we describe simulations of highly rectifying carbon/p‐Si junctions using Sentaurus TCAD from Synopsys. 2‐D and 3‐D models were constructed and optimized to fit I‐V characteristics measured from these junctions. The TCAD models included a resistive interface layer, previously observed experimentally. From the model, the interface resistance was determined to be 0.04 Ω·cm 2 , and the work function of the graphitic contacts was determined to be 4.43 eV. The latter is the work function at the interface, which cannot be measured experimentally. Schottky barrier lowering was implemented in the model to provide agreement with the measurements. The modeling provided information that could not be obtained from measurements and suggested a path to improved devices.