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Effective suppression of the high temperature DC performance degradation of AlInN/GaN HEMTs by back barrier
Author(s) -
Dong Yan,
Chen Dunjun,
Lu Hai,
Zhang Rong,
Zheng Youdou
Publication year - 2017
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2299
Subject(s) - transconductance , materials science , high electron mobility transistor , degradation (telecommunications) , optoelectronics , transistor , gallium nitride , barrier layer , electronic engineering , electrical engineering , nanotechnology , layer (electronics) , voltage , engineering
Performance degradation is an urgent obstacle for the practical high temperature applications of Al 0.83 In 0.17 N/GaN high electron mobility transistors (HEMTs). The present work investigates theoretically the feasibility of suppressing the high temperature performance degradation of Al 0.83 In 0.17 N/GaN HEMTs by inserting an In 0.06 Ga 0.94 N back barrier. The simulation results show that inserting a 3‐nm InGaN back barrier can substantially decrease the off‐state leakage current and increase the saturate drain current and the transconductance, no matter at room temperature or at 400 K, and meanwhile, the performance degradation of the HEMT at 400 K is also effectively suppressed.