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Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET
Author(s) -
Dash Sidhartha,
Lenka Annada Shankar,
Jena Biswajit,
Mishra Guru Prasad
Publication year - 2017
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2283
Subject(s) - transconductance , linearity , materials science , optoelectronics , radio frequency , microwave , doping , oscillation (cell signaling) , quantum tunnelling , transistor , mosfet , electrical engineering , field effect transistor , voltage , engineering , telecommunications , chemistry , biochemistry
The paper presents a cylindrical gate tunnel (CGT) field effect transistors (FETs) with a highly doped pocket layer introduced in the source region. The presence of pocket doped layer in the source provides higher lateral electric field and band‐to‐band tunneling (BTBT) generation rate in the vicinity of tunneling junction which in turn increases the drain current and transconductance significantly. Also, the linearity and radio frequency (RF) performance of the CGT FET with source pocket doping (CGTS) have been extensively investigated. The different linearity and RF figure of merits such as g mn , VIP 2 , VIP 3 , IIP 3 , ZCP, 1‐dB compression point, GBWP, TFP, unity gain cut‐off frequency, and maximum oscillation frequency of the present device are extracted and compared with the results of conventional CGT. The results exhibit superior linearity and RF performance along with improved current carrying capability of the proposed device. Thus, the device can be one of the possible contenders to replace bulk MOSFET in high‐frequency microwave applications. The accuracy of both the devices is validated by TCAD Sentaurus simulator.