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Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate‐all‐around devices
Author(s) -
Lakshmi B.,
Srinivasan R.
Publication year - 2016
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2193
Subject(s) - cutoff frequency , sensitivity (control systems) , transistor , and gate , logic gate , electronic engineering , computer science , materials science , optoelectronics , electrical engineering , engineering , voltage
This paper deals with the effect of structural, doping, and work function parameter variations on the Radio‐Frequency metrics, unity gain cutoff frequency (f t ), non‐quasi static delay, intrinsic gain, and noise figure in double‐gate Fin Field Effect Transistor (FinFET), junctionless FinFETs, and conventional and junctionless gate‐all‐around devices using Technology Computer‐Aided Design simulations. This is done quantitatively by performing a simple sensitivity study experiment and screening analysis through Plackett‐Burman's design of experiment approach. The individual and overall rankings of the input parameters for the devices considered are given. Gate length affects FinFETs significantly, whereas it does not affect junctionless devices. The impact of work function on the output responses is more in junctionless devices compared with that of FinFET and gate‐all‐around devices. Ovality in gate‐all‐around devices has no impact on all the output responses.