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Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits
Author(s) -
Raffo Antonio
Publication year - 2016
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2191
Subject(s) - transistor , nonlinear system , electronic circuit , electronic engineering , gallium nitride , computer science , transistor model , materials science , engineering , nanotechnology , electrical engineering , physics , layer (electronics) , quantum mechanics , voltage
Summary This Special Issue reviews the state‐of‐the‐art and new trends in modeling of Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all receive significant attention, highlighting the potential of this disruptive technology in the development of future communication systems.