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Accurate modeling of pHEMT output current derivatives over a wide temperature range
Author(s) -
Zhu YuanYuan,
Ma JianGuo,
Fu HaiPeng,
Zhang QiJun,
Cheng QianFu,
Lin Qian
Publication year - 2016
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2185
Subject(s) - high electron mobility transistor , atmospheric temperature range , range (aeronautics) , transistor , materials science , current (fluid) , voltage , biasing , biological system , electronic engineering , optoelectronics , electrical engineering , thermodynamics , physics , engineering , composite material , biology
In this paper, the bias‐dependent current–voltage (I–V) characteristics and their high‐order derivatives of GaAs pseudomorphic high electron mobility transistors (pHEMTs) have been modeled over a wide temperature range. To simulate these characteristics at different temperatures, the model is developed considering the dependence on the ambient temperature. It is the first time that the temperature‐dependent high‐order derivatives of I–V characteristics of pHEMT are predicted, which can guarantee their accuracy under different bias conditions. The artificial neural networks are employed with the temperature as one of the input variables. The validity of this model has been demonstrated by comparing the measured and modeled I ds and its derivatives ( g m , g m2 and g m3 , derived from the I–V characteristics numerically) of a GaAs pHEMT at different temperature range (250–400 K, with step of 50 K). The results show that the proposed model has a better agreement of high‐order derivatives than the popularly used Angelov model, especially for the third‐order derivative. Copyright © 2016 John Wiley & Sons, Ltd.