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Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG)
Author(s) -
Trivedi Nitin,
Kumar Manoj,
Haldar Subhasis,
Deswal S.S,
Gupta Mridula,
Gupta R. S.
Publication year - 2016
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2162
Subject(s) - mosfet , poisson's equation , subthreshold conduction , gate oxide , subthreshold slope , double gate , silicon , electric field , poisson distribution , materials science , computational physics , electrical engineering , optoelectronics , physics , transistor , engineering , mathematics , voltage , quantum mechanics , statistics
Summary This paper presents physics based analytical model for center potential, electric field and subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG). The expressions are derived from Poisson's equation in cylindrical co‐ordinate system based on parabolic potential approximation (PPA). The influence of technology parameter variations such as gate length, silicon pillar diameter and oxide thickness on electrical characteristics is studied in detail. Developed analytical model results are validated through the good agreement with simulated data obtained from ATLAS 3D simulator. Copyright © 2016 John Wiley & Sons, Ltd.