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Summary  This paper presents physics based analytical model for center potential, electric field and subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG). The expressions are derived from Poisson's equation in cylindrical co‐ordinate system based on parabolic potential approximation (PPA). The influence of technology parameter variations such as gate length, silicon pillar diameter and oxide thickness on electrical characteristics is studied in detail. Developed analytical model results are validated through the good agreement with simulated data obtained from ATLAS 3D simulator. Copyright © 2016 John Wiley & Sons, Ltd.