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A parameter extraction method for GaN HEMT empirical large‐signal model including self‐heating and trapping effects
Author(s) -
Wen Zhang,
Xu Yuehang,
Wang Changsi,
Zhao Xiaodong,
Chen Zhikai,
Xu Ruimin
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2137
Subject(s) - high electron mobility transistor , matlab , capacitance , trapping , transistor , biological system , extraction (chemistry) , computer science , signal (programming language) , large signal model , materials science , computational physics , optoelectronics , electronic engineering , algorithm , power (physics) , chemistry , physics , electrical engineering , thermodynamics , engineering , electrode , quantum mechanics , ecology , voltage , chromatography , biology , programming language , operating system
Summary This paper presents an analytical parameter extraction method for empirical large‐signal model of GaN high electron mobility transistors (HEMTs) including self‐heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I–V model specific for GaN HEMTs with 53 parameters is employed. The I–V model parameters are divided into blocks according to their physical meaning, and different blocks are extracted separately by fitting the pulsed I–V transfer characteristic curves of the device at different quiescent bias points. The capacitance model is extracted through mathematical analysis. This method has been implemented in MATLAB (MathWorks, Natick, MA, USA) programming, and good accuracy is obtained between model predictions and experimental results. Copyright © 2015 John Wiley & Sons, Ltd.