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Empowering GaN HEMT models: The gateway for power amplifier design
Author(s) -
Crupi Giovanni,
Vadalà Valeria,
Colantonio Paolo,
Cipriani Elisa,
Caddemi Alina,
Vannini Giorgio,
Schreurs Dominique M. M.P.
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2125
Subject(s) - amplifier , high electron mobility transistor , equivalent circuit , transistor , electronic engineering , power (physics) , computer science , transistor model , transconductance , electrical engineering , engineering , bandwidth (computing) , telecommunications , physics , voltage , quantum mechanics
Summary The purpose of this invited paper is to give readers a comprehensive and critical overview on how to extract equivalent‐circuit models for GaN HEMTs, which are the preferred devices for high‐power high‐frequency applications. This overview is meant to provide a practical modeling know‐how for this advanced type of transistor, in order to support its development for improving device technology and circuit design. With the aim to broaden knowledge to empower models, experimental results are presented as illustrative examples of the most crucial challenges faced by the microwave engineers in modeling high‐power GaN HEMTs. All the relevant aspects are covered, going from linear (also noise) to nonlinear models. The analysis is mainly focused on the modeling of distinctive peculiarities of GaN HEMTs. Particular attention is paid to study the importance of accurately modeling the kink effect in the output reflection coefficient, because of the relatively high transconductance, the peak in the magnitude of the short circuit current‐gain, because of the relatively large intrinsic capacitances, and the low‐frequency dispersion, because of trapping and thermal effects. Furthermore, to emphasize the key role of accurate device models for a successful circuit design, a practical example of power amplifier is discussed. Copyright © 2015 John Wiley & Sons, Ltd.