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Efficient modeling of GaN HEMTs for linear and nonlinear circuits design
Author(s) -
Jarndal Anwar,
Kouki Ammar
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2100
Subject(s) - high electron mobility transistor , amplifier , transistor , gallium nitride , nonlinear system , substrate (aquarium) , electronic engineering , signal (programming language) , electronic circuit , large signal model , materials science , optoelectronics , computer science , electrical engineering , physics , engineering , nanotechnology , voltage , layer (electronics) , oceanography , cmos , quantum mechanics , geology , programming language
In this paper, a nonlinear modeling approach for gallium nitride high‐electron mobility transistor (GaN HEMT) on Si substrate is proposed. A reliable method has been developed to extract the extrinsic elements of the model. Its main advantage is its accuracy and dependency on only pinched‐off and unbiased S ‐parameter measurements. The extrinsic elements are de‐embedded from multi‐bias S ‐parameters to characterize the transistor intrinsic and construct a large‐signal model. The validity of the developed modeling approach is verified by comparing its small‐signal and large‐signal (single‐tone and two‐tone) simulations with measured data of a 2‐mm GaN HEMT on Si substrate. The model has been employed for designing a class‐AB power amplifier. A very good agreement between the amplifier simulation and measurement shows the validity of the model. Copyright © 2015 John Wiley & Sons, Ltd.
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