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Modeling the threshold voltage of PNIN SSOI tunnel field‐effect transistor
Author(s) -
Li Yuchen,
Liu Shulin,
Tong Jun,
Zhang Yan
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2095
Subject(s) - threshold voltage , field effect transistor , transistor , materials science , silicon on insulator , voltage , dielectric , poisson's equation , optoelectronics , silicon , electronic engineering , electrical engineering , physics , engineering , quantum mechanics
In this paper, a physically based analytical threshold voltage model for PNIN strained‐silicon‐on‐insulator tunnel field‐effect transistor (PNIN SSOI TFET) is proposed by solving the two‐dimensional (2D) Poisson equation in narrow N + layer and intrinsic region. In the proposed model, the effect of strain (in terms of equivalent Ge mole fraction), narrow N + layer and gate dielectric, and so on, is being considered. The validity of the proposed model is verified by comparing the model results with 2D device simulation results. It is demonstrated that the proposed model can correctly predicts the trends in threshold voltage with varying the device parameters. This proposed model can be effectively used to design, simulate, and fabricate the PNIN SSOI TFETs with the desired performance. Copyright © 2015 John Wiley & Sons, Ltd.