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Scalable modeling with simple topology for stacked millimeter‐wave transformers
Author(s) -
Lu Diqun,
Zhang Wenjuan,
Lin Fujiang
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2092
Subject(s) - inductance , transformer , topology (electrical circuits) , scalability , extremely high frequency , electromagnetic coil , capacitance , electronic engineering , coupling coefficient of resonators , computer science , network topology , electrical engineering , physics , engineering , telecommunications , resonator , electrode , quantum mechanics , database , voltage , operating system
Summary Scalable modeling with very simple topology for stacked millimeter‐wave transformers is presented. Because of high‐frequency effect and thick metal effect, the architecture is based on single‐ π and double‐ π network for transformers with turn ratio 1:1 and 1:2, respectively. The model parameters are extracted from two factors—the layout and process data. Simple and accurate expressions for the self‐inductance, mutual coupling inductance, and oxide capacitance are provided for the model. The proposed model is verified by 65 nm technology transformers. A very close agreement is shown for S‐parameter, self‐inductances of each coil, and coupling coefficient up to 110 GHz. Copyright © 2015 John Wiley & Sons, Ltd.