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Theoretical study of the DC and transient characteristics of a lateral Schottky barrier photodiode for application as high‐speed photodetector
Author(s) -
Debbar Nacer
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2079
Subject(s) - responsivity , schottky barrier , photodiode , photodetector , optoelectronics , ohmic contact , materials science , schottky diode , planar , metal–semiconductor junction , dark current , transient (computer programming) , semiconductor , nanotechnology , computer science , diode , computer graphics (images) , layer (electronics) , operating system
We present a numerical characterization of a high‐speed high‐responsivity GaAs lateral Schottky barrier photodiode (LSBPD). The LSBPD is a planar structure composed of interdigitated Schottky barrier and ohmic contacts. A metal–semiconductor–metal (MSM) structure with identical geometry is simulated for comparison. The dark characteristics are found identical for the two devices. Under illumination, the LSBPD exhibited significantly superior responsivity compared with the MSM, while maintaining comparatively similar response time and 3 dB bandwidths. The results of the study indicate conclusively that the lateral Schottky barrier photodiode can provide an excellent alternative to the standard MSM photodetectors for high‐speed optoelectronic applications. Copyright © 2015 John Wiley & Sons, Ltd.