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A novel method of analytically extracting model parameters for stacked transformers
Author(s) -
Wang Jie,
Liu Jun,
Sun Lingling,
Zhou Mingzhu
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2071
Subject(s) - transformer , parasitic extraction , cmos , electronic engineering , radio frequency , electrical engineering , materials science , engineering , computer science , voltage
Summary An accurate compact model for stacked transformers is proposed. The parasitics between the primary metal coils and the substrate are taken into consideration. The model parameters can be analytically extracted from open‐loaded S ‐parameters measured from two‐port test structures. The modeling methodology renders excellent agreement with the data from both simulation and measurement over the frequency range of 0.1–20 GHz for a monolithic stacked transformer manufactured in 0.18‐µm Radio frequency Complementary Metal Oxide Semiconductor (RF CMOS) technology. Copyright © 2015 John Wiley & Sons, Ltd.