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GaN Ku‐band low‐noise amplifier design including RF life test
Author(s) -
D'Angelo Sara,
Nalli Andrea,
Resca Davide,
Raffo Antonio,
Florian Corrado,
Scappaviva Francesco,
Vannini Giorgio,
Rochette Stephane,
Muraro JeanLuc
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2066
Subject(s) - high electron mobility transistor , low noise amplifier , amplifier , noise figure , electrical engineering , transistor , gallium nitride , radio frequency , noise (video) , materials science , monolithic microwave integrated circuit , noise temperature , optoelectronics , electronic engineering , cmos , engineering , phase noise , computer science , image (mathematics) , layer (electronics) , voltage , artificial intelligence , composite material
As well as largely exploited for microwave high‐power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low‐noise, high dynamic range, and highly robust amplifiers. In this manuscript, we describe the design and characterization of a Ku‐band monolithic microwave integrated circuit low‐noise amplifier for telecom space applications, exploiting an industrial AlGaN/GaN 0.25‐µm HEMT on silicon carbide process. In the frequency band 12.75–14.8 GHz, the LNA features over 20 dB linear gain with a noise figure around 1.8 dB. Input and output return losses are nearly 10 dB. Power dissipation is 700 mW in linear operation. An innovative transistor model based on electromagnetic analyses and small‐signal and noise measurements has been developed to improve the predictions of the foundry model on source‐degenerated devices. A systematic radio frequency (RF) life stress test campaign performed on the designed low‐noise amplifier demonstrated a safe operating area of 15 dBm of overdrive input power. Copyright © 2015 John Wiley & Sons, Ltd.