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Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics
Author(s) -
Niu Guofu,
Ma Rongchen,
Luo Lan,
Cressler John D.
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2055
Subject(s) - heterojunction bipolar transistor , y factor , noise (video) , optoelectronics , materials science , bipolar junction transistor , noise figure , low noise amplifier , infrasound , atmospheric temperature range , transistor , amplifier , electronics , linearity , electronic engineering , electrical engineering , range (aeronautics) , flicker noise , computer science , engineering , physics , acoustics , cmos , voltage , artificial intelligence , meteorology , image (mathematics) , composite material
Summary This paper investigates modeling of silicon‐germanium heterojunction bipolar transistor noise parameters and impedance‐matched Low‐Noise Amplifiers (LNAs) intended for operation across a wide temperature range (from 93 to 393 K). In general, noise performance improves with cooling until about 150 K, then degrades some because of carrier freeze‐out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K. Copyright © 2015 John Wiley & Sons, Ltd.