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Modeling of low‐frequency noise in advanced CMOS devices
Author(s) -
Balestra F.,
Ghibaudo G.,
Jomaah J.
Publication year - 2015
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2052
Subject(s) - silicon on insulator , cmos , noise (video) , nanoelectronics , computer science , electrical engineering , electronic engineering , infrasound , optoelectronics , silicon , materials science , nanotechnology , physics , engineering , acoustics , artificial intelligence , image (mathematics)
The modeling and characterization of low‐frequency noise and noise variability in various regimes of operation are investigated for the main advanced complementary metal–oxide semiconductor (CMOS) technologies. Novel materials and innovative device architectures from 0.5 μm to 20 nm gate lengths are studied. The impact of gate stack, realized with ultrathin oxides, polysilicon gate and high‐k/metal gate is analyzed. The influence of alternative channel materials, in particular ultrathin body silicon‐on‐insulator layers, strain Si and III–V materials is addressed. The comparison of low‐frequency noise in advanced device architectures, including bulk Si, fully depleted SOI, FinFET, junctionless, and multi‐gates structures, is shown. Accurate noise models, taking into account the main physical mechanisms, are proposed for all these very advanced technologies, which will be needed for the nanoelectronics of the next decade. Copyright © 2015 John Wiley & Sons, Ltd.