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A unified cubic flux‐controlled memristor: theoretical analysis, simulation and circuit experiment
Author(s) -
Liu Wei,
Wang FaQiang,
Ma XiKui
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2009
Subject(s) - memristor , flux (metallurgy) , electronic engineering , computer science , electronic circuit , frequency band , topology (electrical circuits) , electrical engineering , materials science , engineering , telecommunications , bandwidth (computing) , metallurgy
In this paper, a unified cubic flux‐controlled memristor is proposed, and how to choose its parameters to obtain an appropriate memristor is investigated. The relevant frequency band of the exciting source that enables the memristor to keep its characteristics (call it mem‐frequency band) is analyzed, and the matter of high mem‐frequency is also clinched. Based on the trend of their i–v curves versus time, the memristors are divided into two types: P and N. The design, simulations and experiments of the circuits for the presented memristor model are given to describe its dynamical behaviors. The results from simulations and experiments are in good agreement with the theoretical analysis, which are of special guidance for designing such device to satisfy the requirements in practical engineering. Copyright © 2014 John Wiley & Sons, Ltd.