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An advanced VHDL‐AMS PiN diode model: towards simulation‐based design of power converters
Author(s) -
Mtimet Sameh,
Ben Salah Walid,
Ben Salah Tarek,
Kourda Férid,
Morel Hervé
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.2005
Subject(s) - vhdl ams , pin diode , diode , converters , power (physics) , electronic engineering , vhdl , computer science , point (geometry) , electrical engineering , engineering , physics , embedded system , hardware description language , field programmable gate array , geometry , mathematics , quantum mechanics
This paper focuses on the modeling of a power PiN diode. The focal point basis is the dependence on temperature. The PiN diode remains a difficult device to model mainly during switching transients. An advanced PiN diode temperature‐dependent model is developed and implemented in VHDL‐AMS. Heterogeneous simulation scheme including the circuit wiring parasitic components, the probe effects and the dependent diode models is successfully simulated using SIMPLORER simulator. Experimental data of several commercial PiN diodes are compared to simulation results at different temperature levels. A good rate of consistency is found. Copyright © 2014 John Wiley & Sons, Ltd.