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Numerical analysis of direct current circuits containing bipolar and metal oxide semiconductor transistors
Author(s) -
Tadeusiewicz M.,
Hałgas S.
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1989
Subject(s) - bipolar junction transistor , electronic circuit , transistor , semiconductor , piecewise , homotopy , integrated circuit , mathematics , materials science , electronic engineering , electrical engineering , optoelectronics , engineering , mathematical analysis , voltage , pure mathematics
SUMMARY The paper brings a numerical method for finding multiple DC operating points of circuits containing bipolar and metal oxide semiconductor (MOS) transistors fabricated in micrometer technology. The method is based on the concept of separable Newton homotopy and division of the searching space into currently changed rectangles (boxes). The method traces a piecewise‐linear homotopy path and intersects some specific plane at the points corresponding to the operating points. Numerical experiments show that the method is remarkably efficient. Three examples including bipolar junction transistors and metal oxide semiconductor circuits are given. Copyright © 2014 John Wiley & Sons, Ltd.