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Unified current modeling in low‐dimensional MOSFETs
Author(s) -
Lakhlef Ahcene,
Benfdila Arezki,
Goudjil Mohamed,
Mokdad Rabah
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1976
Subject(s) - subthreshold conduction , transistor , mosfet , suite , current (fluid) , unified model , field effect transistor , range (aeronautics) , computer science , electronic engineering , materials science , electrical engineering , voltage , optoelectronics , engineering , physics , archaeology , meteorology , composite material , history
The present paper deals with the modeling of low‐dimensional transistors in the form of metal–oxide–semiconductor field‐effect transistors aiming a compact model that may be used to enrich the characterization tools in use and eventually help to extract more information on the interface Si‐SiO2 and the oxide itself. The model is expressed as current versus voltage in the full range and meant to comply with the unified current model. Our model has been compared with the classical model and found to be in a good agreement in the linear and saturation regions. In addition, our model expresses the current in the subthreshold region, which is not described by the classical model. The experimental data obtained on research devices are found to suite our model in all the three regions. Copyright © 2014 John Wiley & Sons, Ltd.