Premium
Generic high‐frequency small‐signal look‐up table model extraction for Si–Ge heterojunction bipolar transistors
Author(s) -
Homayouni Seyed Majid,
Nauwelaers Bart,
Schreurs Dominique M. M.P.
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1975
Subject(s) - heterojunction , bipolar junction transistor , heterojunction bipolar transistor , common emitter , heterostructure emitter bipolar transistor , transistor , optoelectronics , extraction (chemistry) , small signal model , materials science , signal (programming language) , computer science , electrical engineering , engineering , chemistry , voltage , chromatography , programming language
Abstract The objective of this paper is to provide a generic and versatile small‐signal look‐up table model extraction approach for Si―Ge heterojunction bipolar transistors. In this paper, parameter extraction at high frequencies, especially in the millimeter‐wave region, is described. The approach is experimentally demonstrated on a Si―Ge heterojunction bipolar transistor with eight fingers and the emitter size of 0.18 × 0.84 µm 2 . Copyright © 2014 John Wiley & Sons, Ltd.