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A 2‐D surface‐potential‐based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs
Author(s) -
Dutta Pradipta,
Syamal Binit,
Mohankumar Nagarajan,
Sarkar Chandan Kumar
Publication year - 2014
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1971
Subject(s) - threshold voltage , doping , channel (broadcasting) , poisson's equation , transistor , voltage , materials science , mosfet , optoelectronics , field effect transistor , surface (topology) , reverse short channel effect , computational physics , drain induced barrier lowering , short channel effect , condensed matter physics , electrical engineering , physics , mathematics , engineering , quantum mechanics , geometry
In recent times, transistors with heavily doped body have generated much interest because of junctionless channel. In addition, proper threshold voltage regulation requires adjustment of the channel doping, as a result of which most of the compact models become invalid as they consider an intrinsic body. In this paper, a compact surface‐potential‐based threshold voltage model is developed for short channel asymmetric double‐gate metal–oxide–semiconductor field‐effect transistors with heavily/lightly doped channel. The 2‐D surface potential is computed and compared with Technology Computer Aided Design, and a relative error of 2–4 % was obtained. The threshold voltage is solved from 2‐D Poisson's equation using ‘virtual cathode’ method, and a good agreement is observed with the numerical simulations. Also, the model is compared with a reference model and a better result is obtained for heavily doped channel. Copyright © 2014 John Wiley & Sons, Ltd.