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Prediction of the density of interfacial state produced by radiation in NMOS
Author(s) -
Changshi Liu,
Feng Li
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1967
Subject(s) - nmos logic , position (finance) , band gap , range (aeronautics) , materials science , spectral line , computational physics , radiation , semiconductor , oxide , energy density , molecular physics , condensed matter physics , atomic physics , chemistry , optics , physics , composite material , optoelectronics , quantum mechanics , engineering physics , metallurgy , transistor , finance , voltage , economics
This paper is aimed at the description of the mathematical relationships between energy position in the band gap and the density of interfacial state in N‐type metal‐oxide‐semiconductor (NMOS) capacitor irradiated by 60 Co. Substantial differences of density of interfacial state caused by physical environment are observed. On the basis of non‐linear curve fitting, a typical numerical method is used to quantitatively analyze the energy‐dependent density of interfacial state. The simulations agree very well with the observed spectra (density of interfacial state versus the energy position in the band gap). The minimum correlation coefficient between the actual data and calculated one is 0.953. The average relative errors between the measured and modeled quantities do not exceed 6.32% in all considered cases. To my knowledge, it is the first time that the density of interfacial state can be predicted via energy level in the full range of band gap. Copyright © 2013 John Wiley & Sons, Ltd.