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Nonlinear modeling of LDMOS transistors for high‐power FM transmitters
Author(s) -
Bosi Gianni,
Crupi Giovanni,
Vadalà Valeria,
Raffo Antonio,
Giovannelli Antonello,
Vannini Giorgio
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1939
Subject(s) - ldmos , nonlinear system , transistor , frequency domain , signal (programming language) , electronic engineering , materials science , electrical engineering , optoelectronics , computer science , physics , engineering , voltage , computer vision , programming language , quantum mechanics
SUMMARY In this paper, a nonlinear model of a commercial 10‐W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high‐frequency small‐signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low‐frequency large‐signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut‐off of low‐frequency dispersion. A validation of the proposed model is provided by using time‐domain nonlinear measurements carried out at 40 MHz and 100 MHz. Copyright © 2013 John Wiley & Sons, Ltd.