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Harmonic distortion in laterally asymmetric channel metal‐oxide‐semiconductor field‐effect transistors operating in the linear regime
Author(s) -
Rengel Raúl,
Martín María J.
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1928
Subject(s) - total harmonic distortion , mosfet , distortion (music) , transistor , figure of merit , intermodulation , materials science , harmonic , physics , optoelectronics , computational physics , acoustics , cmos , quantum mechanics , amplifier , voltage
A Monte Carlo investigation of the linear regime harmonic distortion in laterally asymmetric channel (LAC) and conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) for radio frequency applications is presented. Simulations of nonlinearities are carried out both considering the Fourier analysis in AC conditions (at 5 and 20 GHz) and the integral function method. The results show a general good agreement between both modeling techniques, with the exception of the third harmonic distortion at the higher frequency, which is underestimated by the integral function method at low gate bias. A general improvement in the total harmonic distortion and second harmonic distortion is evidenced in LAC MOSFETs as compared to conventional devices. While the third harmonic distortion at low gate bias is slightly degraded in LAC transistors, at high V GS , the LAC MOSFET also improves this figure of merit as compared to conventional transistors, which confirms the suitability of LACs also for large‐signal radio frequency applications. Copyright © 2013 John Wiley & Sons, Ltd.