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Subthreshold current modeling for fully depleted short channel double‐gate MOSFETs with consideration of structure asymmetry
Author(s) -
Liu Xi,
Jin Xiaoshi,
Lee JongHo
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1927
Subject(s) - subthreshold conduction , asymmetry , mosfet , channel (broadcasting) , subthreshold slope , gate oxide , poisson's equation , current (fluid) , and gate , materials science , physics , optoelectronics , transistor , electrical engineering , engineering , quantum mechanics , thermodynamics , voltage
We have proposed a subthreshold current model for fully depleted short channel double‐gate (DG) MOSFETs by considering the structure asymmetry. Potential distribution is derived by solving 2‐D Poisson's equation using variable separation technique. The degraded subthreshold characteristics variations due to structure asymmetry such as the difference of oxide thicknesses or biases between front‐gate and back‐gate can be exactly described. Also, body doping and other deep nanoscale design parameters such as body thickness and channel length were considered. The models have been verified by comparing with device simulations' results and found very good agreement. Copyright © 2013 John Wiley & Sons, Ltd.