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Thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors investigated by the advanced optimization technique
Author(s) -
Tseng HsienCheng,
Wu JengMing
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1892
Subject(s) - materials science , heterojunction , optoelectronics , thermal , bipolar junction transistor , transistor , nanoscopic scale , dissipation , power semiconductor device , finite element method , power (physics) , electrical engineering , nanotechnology , voltage , engineering , structural engineering , physics , quantum mechanics , meteorology , thermodynamics
SUMMARY The effects of thermal‐dissipation structure on the thermal performance of nanoscale InGaP/GaAs collector‐up heterojunction bipolar transistors were investigated by using the advanced hybrid optimization technique, a combination of the three‐dimensional finite‐element method for temperature‐distribution analysis and the technology computer‐aided design tool for power‐performance evaluation. Through adequately locating the thermal‐dissipation structure at the rear side of the transistor and via effective thickness‐thinning procedures, which reduce foundry cost, the thermal coupling between collector fingers has been greatly ameliorated and a power‐added efficiency of 45% is achieved. Copyright © 2013 John Wiley & Sons, Ltd.