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Generalized optical gain analysis in nonparabolic semiconductor laser
Author(s) -
Dey Anup,
Maiti Biswajit,
Sarkar Debasree Chanda
Publication year - 2013
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1889
Subject(s) - band gap , semiconductor , laser , semiconductor laser theory , semiconductor optical gain , lattice (music) , electronic band structure , physics , optics , optoelectronics , materials science , condensed matter physics , direct and indirect band gaps , acoustics
SUMMARY A simple generalized theory is developed for optical gain of nonparabolic semiconductor lasers based on the three‐band model of Kane, by taking into account the wave‐vector ( k → ) dependence of the optical matrix element. The gain in laser of nonparabolic semiconductors is demonstrated, by taking InAs, InSb, Hg 1− x Cd x Te and In 1−x Ga x As y P 1−y lattice matched to InP as examples, and it has been found that the peak of the gain spectra for a given carrier density is higher in the three‐band model of Kane than those with parabolic energy band approximations in all the cases. The difference between the peak of gain spectra for three‐band model and the parabolic band model is greater for laser of narrow band gap materials in comparisons with that of laser of wide band gap materials, thereby reveals the necessity for inclusion of the nonparabolicity in modeling lasers of small band gap materials. The well‐known results for wide band gap materials having parabolic energy bands has also been obtained from our generalized formulation under certain limiting condition. Copyright © 2013 John Wiley & Sons, Ltd.