z-logo
Premium
Moment method analysis for capacitance and charge distribution of dielectric coated metallic disk and closed truncated cone isolated in free space
Author(s) -
Mehta Prarthan D.,
Chakrabarty S. B.
Publication year - 2012
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1843
Subject(s) - dielectric , capacitance , materials science , conductor , moment (physics) , integral equation , charge density , method of moments (probability theory) , mathematical analysis , mechanics , geometry , physics , classical mechanics , mathematics , composite material , electrode , optoelectronics , quantum mechanics , statistics , estimator
This paper presents a method for the evaluation of capacitance and charge distribution of a dielectric coated metallic disk and a dielectric coated metallic hollow truncated cone with top and bottom cover plates using the method of moments (MoM) based on pulse basis function and point matching. Boundary conditions for the potential on the conductor surfaces and continuity of the normal component of the displacement density at the dielectric‐free space interface is used to generate two integral equations. Two sets of simultaneous equations are formed from the two integral equations by using MoM. The total free charge on the conductor surface is found from the solution for the set of simultaneous equations. The validity of the analysis has been justified by comparing the data on capacitance available in the literature for metallic disk and hollow truncated cone with top and bottom cover plates, with the data on the capacitance, computed by the presented method for similar structures considering very low dielectric constant as well as very thin dielectric coating. Copyright © 2012 John Wiley & Sons, Ltd.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here