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Three‐dimensional simulation for negative resistance characteristics of parasitic bipolar transistor in a small‐sized mosfet structure
Author(s) -
Ju Chiping,
Zemanian Armen H.
Publication year - 1995
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660080506
Subject(s) - mosfet , materials science , transistor , bipolar junction transistor , substrate (aquarium) , optoelectronics , parasitic element , voltage , electrical engineering , engineering , biology , ecology
The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small‐sized MOSFET structure. Physical experiments and three‐dimensional simulations verify the expected negative resistance characteristics. The effects of variations of device parameters such as injected substrate current levels, doping concentrations, channel widths, and physical device sizes are investigated by simulation. According to simulation results, the operation of a parasitic bipolar transistor is initiated by the injected substrate current; this explains the negative resistance characteristics occurring at low operating voltages.