Premium
Modelling an insulated gate bipolar transistor using bond graph techniques
Author(s) -
Besbes Kamel
Publication year - 1995
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660080106
Subject(s) - insulated gate bipolar transistor , bond graph , modular design , bipolar junction transistor , power electronics , electronic circuit , power semiconductor device , transistor , computer science , electronic engineering , graph , electronics , mosfet , electrical engineering , engineering , voltage , mathematics , theoretical computer science , combinatorics , operating system
Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a new power device which combines a bipolar transistor with a MOSFET transistor. We develop a new IGBT bond graph model. The bond graph techniques give us good primary simulation results. We present in this paper the principle and the results of this modelling method.