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Numerical algorithms for modelling microwave semiconductor devices
Author(s) -
Cole Eric A. B.,
Snowden Christopher M.
Publication year - 1995
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660080104
Subject(s) - microwave , mesfet , semiconductor , convergence (economics) , algorithm , computer science , degenerate energy levels , planar , stability (learning theory) , diffusion , semiconductor device , electronic engineering , transistor , materials science , optoelectronics , electrical engineering , engineering , voltage , physics , layer (electronics) , telecommunications , field effect transistor , nanotechnology , quantum mechanics , computer graphics (images) , machine learning , economic growth , economics
Abstract This paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter–Gummel formulation is presented which is compatible with drift diffusion and energy‐transport formulations, and is suitable for implementing in two‐dimensional simulations on personal computers. The treatment allows for fully degenerate semiconductors, but implementation for the nondegenerate situation is easily obtained as a special case. The convergence and stability properties of the generalized scheme are discussed. The simulation of a planar submicrometre gate length GaAs MESFET is used to illustrate the application of these algorithms.