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A non‐linear and distributed modelling procedure of fets
Author(s) -
Ongareau Eric,
Aubourg Michel,
Obregon Juan J.,
Gayral Michel,
Bosisio Renato G.
Publication year - 1994
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660070502
Subject(s) - microwave , linear circuit , electronic engineering , equivalent circuit , port (circuit theory) , harmonic balance , transistor , computer science , coupling (piping) , topology (electrical circuits) , nonlinear system , physics , electrical engineering , engineering , voltage , mechanical engineering , telecommunications , quantum mechanics
This paper describes a rigorous and systematic procedure to derive a non‐linear distributed FET model that an easily be implemented in CAD routines of simulators based on harmonic balance techniques. The new model is derived from a knowldge of the conventional linear lumped equivalent circuit, from non‐linear current sources extracted with pulsed measurements, and from the physical dimensions of the FET. For fundamental and haromonic requencies, the FET is modelled by N identical cells. Each cell is made up of a non‐linear two‐port section inserted between two linear four‐port sections that simulate the coupling and the distributed effects along the electrodes of the FET in the width direction only. This non‐linear distributed scaling approach to FET modelling has been applied to the analysis of a submicrometre‐gate GaAs FET at Millimetre‐wave frequencies, and the results were compared to the non‐linear lumped element approach. This approach can be applied to other transistors used in non‐linear regions at microwave and millimetre‐wave frequencies.