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TLM modelling of diffusion, drift and recombination of charge carriers in semiconductors
Author(s) -
AlZeben M. Y.,
Saleh A. H. M.,
AlOmar M. A.
Publication year - 1992
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660050403
Subject(s) - diffusion , semiconductor , charge carrier , charge (physics) , recombination , node (physics) , physics , extension (predicate logic) , semiconductor device , statistical physics , materials science , computational physics , condensed matter physics , chemistry , optoelectronics , computer science , quantum mechanics , nanotechnology , biochemistry , layer (electronics) , gene , programming language
The paper provides an extension to the one‐dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transport phenomena is also presented here. The analytical solution for infinitely long semiconductors is compared with the TLM numerical results.