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Time‐domain numerical modelling of microwave non‐linear circuits
Author(s) -
Dalle C.,
Rolland P. A.,
Friscourt M. R.
Publication year - 1992
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660050106
Subject(s) - limiter , diode , time domain , step recovery diode , pin diode , electronic circuit , commutation , waveform , semiconductor device , transient (computer programming) , microwave , power (physics) , electronic engineering , computer simulation , computer science , control theory (sociology) , physics , voltage , engineering , electrical engineering , mechanics , materials science , schottky diode , telecommunications , control (management) , layer (electronics) , quantum mechanics , artificial intelligence , composite material , computer vision , operating system
A numerical time‐domain modelling of non‐linear microwave circuits is presented. It is based on a numerical procedure allowing the solution of the integro‐differential equation driving the instantaneous electrical behaviour of a lumped‐element circuit while accounting for the semiconductor device by means of an accurate numerical macroscopic model. This modelling is firstly validated by studying the DC turn‐on and DC forward–reverse commutation of a PIN diode. The diode voltage and current waveform are qualitatively consistent with experimental ones, Moreover, the predicted recovery time values are found to be in good agreement with those issued from the classical analytical theory. Secondly, in order to illustrate the present capabilities of the model, the whole transient response of a back‐to‐back silicon PIN diode passive power limiter to a high‐input‐RF‐power pulse is described. It is demonstrated that in the present case of a 2 μm‐long PIN diode, the high‐input‐power steady‐state operation only relies on one diode. To our knowledge, it is the first time this kind of simulation is applied to a two‐diode circuit.