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Numerical modelling of hot electron transport in A graded heterojunction diode
Author(s) -
Hjelmgren Hans,
Snowden Christopher M.
Publication year - 1992
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660050103
Subject(s) - heterojunction , electron , energy balance , diode , grid , electron transport chain , energy transport , interface (matter) , energy (signal processing) , computational physics , optoelectronics , physics , materials science , condensed matter physics , mechanics , chemistry , engineering physics , mathematics , geometry , quantum mechanics , thermodynamics , biochemistry , bubble , maximum bubble pressure method
A detailed one‐dimensional energy transport model for unipolar GaAs/AlGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non‐uniform grid‐mesh is used to obtain short simulation times, while the grid‐distance at the N–n ++ interface is small, which is essential to obtain a low reverse current.