Numerical modelling of hot electron transport in A graded heterojunction diode | Zendy

Hjelmgren Hans | Zendy; Snowden Christopher M. | Zendy

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Numerical modelling of hot electron transport in A graded heterojunction diode

Author(s) -

Hjelmgren Hans,

Snowden Christopher M.

Publication year - 1992

Publication title -

international journal of numerical modelling: electronic networks, devices and fields

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.249

H-Index - 30

eISSN - 1099-1204

pISSN - 0894-3370

DOI - 10.1002/jnm.1660050103

Subject(s) - heterojunction , electron , energy balance , diode , grid , electron transport chain , energy transport , interface (matter) , energy (signal processing) , computational physics , optoelectronics , physics , materials science , condensed matter physics , mechanics , chemistry , engineering physics , mathematics , geometry , quantum mechanics , thermodynamics , biochemistry , bubble , maximum bubble pressure method

A detailed one‐dimensional energy transport model for unipolar GaAs/AlGaAs heterojunction structures is implemented, by extending the basic transport equations to include the energy balance equation for electrons. A non‐uniform grid‐mesh is used to obtain short simulation times, while the grid‐distance at the N–n ++ interface is small, which is essential to obtain a low reverse current.

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