Premium
The modified semiconductor equations and associated algorithms for physical simulation
Author(s) -
Xue Hongxi,
Howes Michael J.,
Snowden Christopher M.
Publication year - 1991
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660040206
Subject(s) - mesfet , semiconductor , set (abstract data type) , algorithm , computer science , dual (grammatical number) , scheme (mathematics) , mathematics , engineering , transistor , electrical engineering , mathematical analysis , voltage , field effect transistor , literature , programming language , art
A set of modified semiconductor equations is described together with novel algorithms for solving them. These ensure a well‐behaved, guaranteed convergent solution for a steady‐state semiconductor model. Examples results on the simulation of a GaAs Dual Gate MESFET are given to demonstrate the efficiency of the new scheme.