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A model for atomic mixing
Author(s) -
Wadsworth M.,
Armour D. G.,
Badheka R.,
Collins R.
Publication year - 1990
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660030210
Subject(s) - ion , mixing (physics) , sputtering , ion beam mixing , atomic physics , materials science , solid surface , work (physics) , ion beam , atomic diffusion , diffusion , computational physics , molecular physics , chemistry , physics , ion beam deposition , chemical physics , thermodynamics , nanotechnology , thin film , quantum mechanics
This paper is concerned with the theoretical determination of the amount of atomic mixing which accompanies the erosion of a solid surface exposed to an energetic ion beam. The work is relevant to sputter depth profiling where such mixing complicates the deduction of the initial depth distributions from the measured ion yields. A mathematical model, which considers the effects of incident ion accumulation, ballistic relocation and diffusion is described. The governing integro‐differential equations are solved numerically. Results for a GaAs‐AlGaAs multi‐layer structure bombarded with O 2 +ions are compared with results obtained experimentally.