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Simulation of capacitive array sensors using finite and infinite elements
Author(s) -
Heyliger P. R.,
Moulder J. C.,
Nakagawa N.
Publication year - 1989
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660020303
Subject(s) - capacitive sensing , admittance , parametric statistics , finite element method , dielectric , exponential function , line (geometry) , mathematical analysis , acoustics , materials science , mathematics , geometry , electrical engineering , physics , optoelectronics , engineering , electrical impedance , structural engineering , statistics
The response of capacitive array sensors in the presence of flawed solid materials is simulated using finite elements and infinite elements with exponential decay. Conventional finite elements are used to model the critical regions near the probe and the surface of the solid. Infinite elements are used to represent the farfield conditions of the space surrounding the probe and the solid. The method is first applied to problems with analytic solutions to determine the accuracy of the results obtained using the infinite elements. The response of a capacitive array sensor is then simulated using a line integral which measures the relative change in admittance between flawed and unflawed solids. Examples of capacitive probe responses are given for several parametric variations of the flaw size and dielectric constant of the solid.