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A self‐consistent model for short‐channel mosfets
Author(s) -
Banna M. El,
Nokali M. El
Publication year - 1989
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660020204
Subject(s) - transconductance , channel length modulation , channel (broadcasting) , conductance , velocity saturation , modulation (music) , mobility model , mosfet , saturation (graph theory) , electronic engineering , statistical physics , physics , computer science , electrical engineering , engineering , mathematics , telecommunications , transistor , condensed matter physics , voltage , combinatorics , acoustics
A de model for short‐channel MOSFETs is presented in this paper. Several second‐order effects associated with small‐geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modeling of the output conductance and the transconductance which are important in analogue circuit simulation. The theoretical predictions of the model are in good agreement with the experimental data available in the literature.