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New one‐ and two‐dimensional algorithms for the transient simulation of semiconductor devices
Author(s) -
Towers M. S.,
McCowen A.
Publication year - 1988
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660010205
Subject(s) - transient (computer programming) , discretization , semiconductor , semiconductor device , voltage , algorithm , computer science , solenoidal vector field , boundary (topology) , transient analysis , current (fluid) , topology (electrical circuits) , electronic engineering , transient response , electrical engineering , materials science , mathematics , physics , engineering , mechanics , nanotechnology , mathematical analysis , layer (electronics) , vector field , operating system
One‐ and two‐dimensional algorithms for the transient simulation of semiconductor devices are presented which incorporate a solenoidal total current. The paper includes results from one‐dimensional simulation of a p ‐ n junction, including forward‐to‐reverse bias switching and also switching and also switch‐on into high injection in an asymmetric structure. A discretization scheme for the two‐dimensional formulation is described with details on handling voltage driven terminals and the associated boundary conditions.