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Two‐dimensional numerical simulation of short‐gate‐length gaAs MESFETs and application to the travelling gunn domain phenomenon
Author(s) -
ElGhazaly Samir,
Itoh Tatsuo
Publication year - 1988
Publication title -
international journal of numerical modelling: electronic networks, devices and fields
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.249
H-Index - 30
eISSN - 1099-1204
pISSN - 0894-3370
DOI - 10.1002/jnm.1660010105
Subject(s) - mesfet , gunn diode , boltzmann equation , oscillation (cell signaling) , active layer , boltzmann constant , semiconductor , domain (mathematical analysis) , condensed matter physics , electron , semiconductor device , physics , materials science , computational physics , mechanics , chemistry , layer (electronics) , optoelectronics , transistor , mathematics , mathematical analysis , diode , quantum mechanics , field effect transistor , voltage , nanotechnology , biochemistry , thin film transistor
The Boltzmann transport equation is used to derive a set of conservation equations which is capable of describing the electron transport phenomena in a single‐valley semiconductor. These conservation equations are averaged over the different valleys of the conduction band to develop another set of equations that can be used to describe accurately the electron transport phenomena in a multi‐valley semiconductor, such as GaAs, using the equivalent single‐electron gas model whose characteristics are the average weighted characteristics of the constituent gases. The nonstationary effects are included by using energy dependent mobility and electron temperature functions. This program is used to simulate a GaAs MESFET with a 0·5 μm gate length and a 0.2 μm thick active layer. The active layer is doped at 10 17 cm −3 . A travelling Gunn domain is observed between the gate and the drain. The domain oscillation frequency is much higher than the normal operating frequency of the MESFET. The domain formation's dependence on the gate bias and the active layer thickness are also presented.