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Rapid defect characterization: The efficiency of diffraction contrast‐scanning transmission electron microscopy
Author(s) -
Wang Lingling,
Shi Ruikai,
Lu Yuan,
Yu Yi
Publication year - 2020
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.23556
Subject(s) - energy filtered transmission electron microscopy , scanning confocal electron microscopy , transmission electron microscopy , scanning electron microscope , scanning transmission electron microscopy , materials science , diffraction , conventional transmission electron microscope , semiconductor , high resolution transmission electron microscopy , microscopy , resolution (logic) , optics , characterization (materials science) , electron tomography , silicon , electron microscope , electron diffraction , reflection high energy electron diffraction , optoelectronics , nanotechnology , physics , computer science , artificial intelligence , composite material
Abstract Defect information is critical for both fundamental research and industrial analysis of metals and semiconductors. Diffraction contrast is the basis for defect imaging using either X‐ray or electron microscopy. Taking the advantage of high resolution in electron microscopy techniques, here we evaluate the efficiency for diffraction contrast imaging based on scanning transmission electron microscopy. The working principle and application are demonstrated using the typical semiconductor material silicon as an example. The efficiency is improved at least an order of magnitude compared with conventional electron microscopy method.