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Influence of gallium‐doped zinc‐oxide thickness on polymer light‐emitting diode luminescence efficiency
Author(s) -
Chen Syhann,
Chen Weichun,
Yu Changfeng,
Lin Chiafeng,
Kao Poching
Publication year - 2013
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/jemt.22229
Subject(s) - electroluminescence , materials science , substrate (aquarium) , doping , gallium , optoelectronics , luminescence , zinc , diode , light emitting diode , surface roughness , analytical chemistry (journal) , nanotechnology , layer (electronics) , composite material , chemistry , metallurgy , oceanography , chromatography , geology
Conducting atomic force microscopy and scanning surface potential microscopy were used to study the local electrical properties of gallium‐doped zinc oxide (GZO) films prepared by pulsed laser deposition (PLD) on a polyimide (PI) substrate. For a PLD deposition process time of 8 min, the root‐mean‐square roughness, coverage percentage of the conducting regions, and mean work function on the GZO surface were 2.33 nm, 96.6%, and 4.82 eV, respectively. When the GZO/PI substrate was used for a polymer light‐emitting diode (PLED), the electroluminescence intensity increased by nearly 20% compared to a standard PLED, which was based on a commercial‐ITO/glass substrate. Microsc. Res. Tech. 76:783–787, 2013 . © 2013 Wiley Periodicals, Inc.